收藏本站
NTD4970N
Power MOSFET
30 V, 36 A, Single N ? Channel, DPAK/IPAK
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? Three Package Variations for Design Flexibility
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
? CPU Power Delivery
? DC ? DC Converters
V (BR)DSS
30 V
http://onsemi.com
R DS(ON) MAX
11 m W @ 10 V
21 m W @ 4.5 V
D
I D MAX
36 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
30
± 20
V
V
G
Continuous Drain
Current R q JA
(Note 1)
T A = 25 ° C
T A = 100 ° C
I D
11.6
8.2
A
S
N ? CHANNEL MOSFET
Power Dissipation
R q JA (Note 1)
T A = 25 ° C
P D
2.55
W
4
4
1
2 3
3
Continuous Drain
Current R q JA
(Note 2)
Power Dissipation
R q JA (Note 2)
Continuous Drain
Current R q JC
(Note 1)
Power Dissipation
R q JC (Note 1)
Steady
State
T A = 25 ° C
T A = 100 ° C
T A = 25 ° C
T C = 25 ° C
T C = 100 ° C
T C = 25 ° C
I D
P D
I D
P D
8.5
6.0
1.38
36
25
24.6
A
W
A
W
4
1 2
3
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
1
2
CASE 369AC CASE 369D
3 IPAK IPAK
(Straight Lead) (Straight Lead
DPAK)
4
Pulsed Drain t p =10 m s
Current
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
T A = 25 ° C
T A = 25 ° C
I DM
I DmaxPkg
T J ,
T STG
I S
130
38
? 55 to
+175
22
A
A
° C
A
4
Drain
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
Drain
Drain to Source dV/dt
dV/dt
6.0
V/ns
1
2
3
Source Gate Drain Source
1
2
3
Single Pulse Drain ? to ? Source Avalanche EAS 11 mJ
Energy (T J = 25 ° C, V DD = 24 V, V GS = 10 V,
I L = 15 A pk , L = 0.1 mH, R G = 25 W)
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8” from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 sq ? in pad, 1 oz Cu.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
2
1 Drain 3
Gate
Gate Drain Source
Y = Year
WW = Work Week
4970N = Device Code
G = Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
? Semiconductor Components Industries, LLC, 2011
June, 2011 ? Rev. 0
1
Publication Order Number:
NTD4970N/D
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NTD50N03RT4G MOSFET N-CH 25V 7.8A DPAK
NTD5413NT4G MOSFET N-CH 60V 30A DPAK
NTD5414NT4G MOSFET N-CH 60V 24A DPAK
NTD5802NT4G MOSFET N-CH 40V 16.4A DPAK
NTD5803NT4G MOSFET N-CH 40V 76A DPAK
NTD5804NT4G MOSFET N-CH 40V 69A DPAK
NTD5805NT4G MOSFET N-CH 40V 51A DPAK
NTD5806NT4G MOSFET N-CH 40V 33A DPAK
相关代理商/技术参数
NTD4970NT4G 功能描述:MOSFET NFET DPAK 30V 38A 11MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4979N-1G 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4979N-35G 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4979NT4G 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4N06LT4G 制造商:on semi 功能描述:Tape & Reel
NTD4N60 制造商:Rochester Electronics LLC 功能描述:- Bulk
NTD4N60/D 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 4 Amps， 600 Volts
NTD4N60-001 制造商:ON Semiconductor 功能描述: